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| AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical. Features VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 16m (VGS = 4.5V) RDS(ON) < 21m (VGS = 2.5V) RDS(ON) < 30m (VGS = 1.8V) ESD Rating: 2KV HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation Power Dissipation B C C Maximum 20 12 18 18 30 18 37 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.9 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD434 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A VGS=2.5V, ID=10A VGS=1.8V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=18A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.5 30 10.9 14.3 12.6 16.5 23.2 36 0.73 1 18 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 40.1 VGS=10V, VDS=10V, ID=18A 8.9 1.7 6.2 4 VGS=10V, VDS=10V, RL=0.56, RGEN=3 IF=18A, dI/dt=100A/s 2 Min 20 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current 1 5 10 0.75 1 14 18 16 21 30 A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 15 42.2 18.2 23.2 4.9 Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev 3 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 25 RDS(ON) (m) 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance VGS=1.8V 1.8 ID=18A 1.6 VGS=4.5V VGS=2.5V VGS=1.5V 5 25C 0 0 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 0.5 2.5 ID(A) 20 15 10 125C 2.5V 4.5V 2V 30 VDS=5V 25 1.4 VGS=10V VGS=1.8V 1.2 1 35 30 25 20 15 25C 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C IS (A) ID=18A 1.0E+02 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOD434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=18A Capacitance (pF) 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 100.0 50 RDS(ON) limited 1s 10s 40 1ms 10ms 0.1s 100s Power (W) 30 20 10 0 0.001 TJ(Max)=150C TA=25C ID (Amps) 10.0 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 DC 10 VDS (Volts) 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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